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IGBT 650V 30A TO-3PFP Built-In FRD

Package Information

CAD Model:View CAD Model
Pkg. Type:TO-3PFP
Pkg. Code:pkg_11876
Lead Count (#):3
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
RoHS (RJH65T04BDPM-A0#T2)EnglishJapanese
ECCN (US)
HTS (US)

Product Attributes

Pkg. TypeTO-3PFP
Lead Count (#)3
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
ApplicationPFC
Channels (#)2
ConfigurationBuilt-In FRD
FRD Vf (V)1.4
FRD trr (ns)80
IC @100 °C (A)30
IC @25 °C (A)60
Ic (Peak) (A)120
Lead CompliantNo
Length (mm)24
MOQ1
Mounting TypeThrough Hole
Pc (W)65
Pch (W)65
Price (USD)$8.64
Qualification LevelIndustrial
Series Name65T0x Series
Simulation Model AvailableYes
Tape & ReelNo
VCE (sat) (V)1.5
VCES (V)650
VDSS (Max) (V)650
Width (mm)16
tf (Typical) (µs)0.045

Description

The RJH65T04BDPM-A0 650V, 30A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-3PFP package type.