| CAD Model: | View CAD Model |
| Pkg. Type: | TO-3PFP |
| Pkg. Code: | pkg_11876 |
| Lead Count (#): | 3 |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| RoHS (RJH65T04BDPM-A0#T2) | EnglishJapanese |
| ECCN (US) | |
| HTS (US) |
| Pkg. Type | TO-3PFP |
| Lead Count (#) | 3 |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| Application | PFC |
| Channels (#) | 2 |
| Configuration | Built-In FRD |
| FRD Vf (V) | 1.4 |
| FRD trr (ns) | 80 |
| IC @100 °C (A) | 30 |
| IC @25 °C (A) | 60 |
| Ic (Peak) (A) | 120 |
| Lead Compliant | No |
| Length (mm) | 24 |
| MOQ | 1 |
| Mounting Type | Through Hole |
| Pc (W) | 65 |
| Pch (W) | 65 |
| Price (USD) | $8.64 |
| Qualification Level | Industrial |
| Series Name | 65T0x Series |
| Simulation Model Available | Yes |
| Tape & Reel | No |
| VCE (sat) (V) | 1.5 |
| VCES (V) | 650 |
| VDSS (Max) (V) | 650 |
| Width (mm) | 16 |
| tf (Typical) (µs) | 0.045 |
The RJH65T04BDPM-A0 650V, 30A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-3PFP package type.