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Renesas Electronics Corporation
IGBT 1250V 75A TO-247plus Built-In FRD

Package Information

CAD Model:View CAD Model
Pkg. Type:TO-247plus
Pkg. Code:pkg_11884
Lead Count (#):3
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
RoHS (RBN75H125S1FP4-A0#CB0)EnglishJapanese
ECCN (US)
HTS (US)

Product Attributes

Pkg. TypeTO-247plus
Lead Count (#)3
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
ApplicationInverter
Channels (#)1
ConfigurationBuilt-In FRD
FRD Vf (V)2.4
FRD trr (ns)245
IC @100 °C (A)75
IC @25 °C (A)150
Ic (Peak) (A)300
Lead CompliantNo
Length (mm)21
MOQ1
Mounting TypeThrough Hole
Pc (W)517
Pch (W)517
Price (USD)$20.7
Qualification LevelIndustrial
Series NameRBNxxH125S1 Series
Simulation Model AvailableYes
Tape & ReelNo
VCE (sat) (V)1.8
VCES (V)1250
VDSS (Max) (V)1250
Width (mm)16
tf (Typical) (µs)0.096
tsc (μs)10

Description

The RBN75H125S1FP4-A0 1250V, 75A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.