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IGBT 1250V 75A TO-247plus Built-In FRD

Package Information

CAD Model: View CAD Model
Pkg. Type: TO-247plus
Pkg. Code: pkg_11884
Lead Count (#): 3
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
RoHS (RBN75H125S1FP4-A0#CB0) EnglishJapanese
ECCN (US)
HTS (US)

Product Attributes

Pkg. Type TO-247plus
Lead Count (#) 3
Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
Application Inverter
Channels (#) 1
Configuration Built-In FRD
FRD Vf (V) 2.4
FRD trr (ns) 245
IC @100 °C (A) 75
IC @25 °C (A) 150
Ic (Peak) (A) 300
Lead Compliant No
Length (mm) 21
MOQ 1
Mounting Type Through Hole
Pc (W) 517
Pch (W) 517
Price (USD) $20.7
Qualification Level Industrial
Series Name RBNxxH125S1 Series
Simulation Model Available Yes
Tape & Reel No
VCE (sat) (V) 1.8
VCES (V) 1250
VDSS (Max) (V) 1250
Width (mm) 16
tf (Typical) (µs) 0.096
tsc (μs) 10

Description

The RBN75H125S1FP4-A0 1250V, 75A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.