Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | TO-247A |
| Pkg. Code: | pkg_8818 |
| Lead Count (#): | 3 |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| RoHS (RBN50H65T1FPQ-A0#CB0) | EnglishJapanese |
| ECCN (US) | |
| HTS (US) |
Product Attributes
| Pkg. Type | TO-247A |
| Lead Count (#) | 3 |
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| Application | Inverter |
| Channels (#) | 1 |
| Configuration | Built-In FRD |
| FRD Vf (V) | 2 |
| FRD trr (ns) | 65 |
| IC @100 °C (A) | 50 |
| IC @25 °C (A) | 100 |
| Ic (Peak) (A) | 200 |
| Lead Compliant | No |
| MOQ | 1 |
| Mounting Type | Through Hole |
| Pc (W) | 250 |
| Pch (W) | 250 |
| Price (USD) | $9.36 |
| Qualification Level | Industrial |
| Series Name | RBNxxH65T1 Series |
| Simulation Model Available | Yes |
| Tape & Reel | No |
| VCE (sat) (V) | 1.5 |
| VCES (V) | 650 |
| VDSS (Max) (V) | 650 |
| tf (Typical) (µs) | 0.04 |
Resources for RBN50H65T1FPQ-A0
Description
The RBN50H65T1FPQ-A0 650V, 50A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.