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750V – 300A – IGBT Chip

Package Information

CAD Model: View CAD Model
Pkg. Type: Sawn Wafer
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

Pb (Lead) Free No
Moisture Sensitivity Level (MSL)
ECCN (US)
HTS (US)

Product Attributes

Pkg. Type Sawn Wafer
Pb (Lead) Free No
Application Inverter
Channels (#) 1
IC (A) 300
Ic (Peak) (A) 900
Lead Compliant No
MOQ 1
Nch/Pch Nch
Qualification Level Automotive
Simulation Model Available Yes
Tape & Reel No
Technology AE5
Tj (°C) 185
VCE (sat) (V) 1.35
VCES (V) 750
VGE (Off) (V) 5.5
tsc (μs) 3.4

Description

Renesas' AE5 IGBTs for automotive applications use a unique trench gate configuration in their process structure.

  • The lowest conduction loss on the market
  • Achieve low saturation voltage, low switching loss, and chip shrink without sacrificing robustness
  • Easier parallel operation by suppressing Vth variation
  • Achieve Tjmax 185degC from 175degC (AE4), resulting in more stable performance in high temperature area

This 750V/300A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.