Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | Wafer |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | |
| Pb (Lead) Free | No |
| ECCN (US) | |
| HTS (US) |
Product Attributes
| Pkg. Type | Wafer |
| Application | Inverter |
| Channels (#) | 1 |
| IC @25 °C (A) | 400 |
| Lead Compliant | Yes |
| MOQ | 1 |
| Nch/Pch | Nch |
| Pb (Lead) Free | No |
| Qualification Level | Industrial |
| Series Name | RBNxxN180S2 Series |
| Tape & Reel | No |
| VCE (sat) (V) | 1.6 |
| VCES (V) | 1800 |
| tsc (μs) | 10 |
Resources for RBN200N180S2HFWA
Description
Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) use an exclusive trench gate configuration in the process structure. These devices provide faster switching performance compared to previous IGBT generations. They also reduce conduction losses by decreasing the saturation voltage.
Our 1800V - 400A/200A IGBTs are optimized for high-power applications such as wind power generation and solar inverters.