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ANL4 N-Channel Power MOSFET 40V–100A–2.3mΩ–SO8-FL 5x6

Package Information

CAD Model: View CAD Model
Pkg. Type: SO8-FL
Pkg. Code:
Lead Count (#): 8
Pkg. Dimensions (mm): 5.75 x 4.90 x 1.10
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
ECCN (US)
HTS (US)

Product Attributes

Pkg. Type SO8-FL
Lead Count (#) 8
Carrier Type Embossed Tape
Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
Channels (#) 1
Ciss (Typical) (pF) 3200
Country of Assembly MALAYSIA
Country of Wafer Fabrication JAPAN
Function Power MOSFETs
Gate Level Standard
ID (A) 100
Id max @ 25°C (A) 100
Lead Compliant No
MOQ 5000
Mounting Type Surface Mount
Nch/Pch Nch
Pch (W) 88
Pkg. Dimensions (mm) 5.75 x 4.90 x 1.10
Qg typ (nC) 60
Qualification Level Industrial
RDS (ON) (Max) @10V or 8V (mohm) 2.3
RDS (ON) (Typical) @ 10V / 8V (mohm) 1.86
Series Name ANL4
Simulation Model Available Yes
Standard Pkg. Type SO8-FL 5x6 BSC
Tape & Reel No
VDSS (Max) (V) 40
VGSS (V) 20
Vgs (off) (Max) (V) 4

Description

The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system.