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Renesas Electronics Corporation
NEW
100V, 340A, 1.5mΩ, REXFET-1 N-Channel Power MOSFET in TOLG

Package Information

CAD Model:View CAD Model
Pkg. Type:TOLG
Pkg. Code:
Lead Count (#):8
Pkg. Dimensions (mm):9.90 x 11.70 x 2.50
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
ECCN (US)
HTS (US)8541.29.0095
RoHS (RBE015N10R1SZPV#GB0)EnglishJapanese
Pb (Lead) FreeYes

Product Attributes

Pkg. TypeTOLG
Standard Pkg. TypeTOLG
Lead Count (#)8
Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)1
Channels (#)1
Ciss (Typical) (pF)13000
Country of AssemblyMALAYSIA
Country of Wafer FabricationJAPAN
FunctionPower MOSFETs
Gate LevelStandard
ID (A)340
Id max @ 25°C (A)340
Lead CompliantNo
Length (mm)11.7
MOQ1500
Mounting TypeSurface Mount
Nch/PchNch
Pb (Lead) FreeYes
Pch (W)468
Pkg. Dimensions (mm)9.90 x 11.70 x 2.50
Price (USD)$2.27204
Qg typ (nC)170
Qualification LevelIndustrial
RDS (ON) (Max) @10V (mohm)1.5
RDS (ON) (Typical) @ 10V / 8V (mohm)1.3
Series NameREXFET-1
Simulation Model AvailableYes
Tape & ReelYes
Thickness (mm)2.5
VDSS (Max) (V)100
VGSS (V)20
Vgs (off) (Max) (V)4
Width (mm)9.9

Description

The RBE015N10R1SZPV N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLG package. The TOLG package has a similar profile and footprint to the TOLL package, but with the benefits of gullwing leads for high thermal cycling capability.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.