Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | TOLG |
| Pkg. Code: | |
| Lead Count (#): | 8 |
| Pkg. Dimensions (mm): | 9.90 x 11.70 x 2.50 |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 1 |
| ECCN (US) | |
| HTS (US) | 8541.29.0095 |
| RoHS (RBE015N10R1SZPV#GB0) | EnglishJapanese |
| Pb (Lead) Free | Yes |
Product Attributes
| Pkg. Type | TOLG |
| Standard Pkg. Type | TOLG |
| Lead Count (#) | 8 |
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 1 |
| Assembly Location | JAPAN |
| Channels (#) | 1 |
| Ciss (Typical) (pF) | 13000 |
| Function | Power MOSFETs |
| Gate Level | Standard |
| ID (A) | 340 |
| Id max @ 25°C (A) | 340 |
| Lead Compliant | No |
| Length (mm) | 11.7 |
| MOQ | 1500 |
| Mounting Type | Surface Mount |
| Nch/Pch | Nch |
| Pb (Lead) Free | Yes |
| Pch (W) | 468 |
| Pkg. Dimensions (mm) | 9.90 x 11.70 x 2.50 |
| Price (USD) | $2.27204 |
| Qg typ (nC) | 170 |
| Qualification Level | Industrial |
| RDS (ON) (Max) @10V (mohm) | 1.5 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 1.3 |
| Series Name | REXFET-1 |
| Simulation Model Available | Yes |
| Tape & Reel | Yes |
| Thickness (mm) | 2.5 |
| VDSS (Max) (V) | 100 |
| VGSS (V) | 20 |
| Vgs (off) (Max) (V) | 4 |
| Wafer Fab Location | JAPAN |
| Width (mm) | 9.9 |
Resources for RBE015N10R1SZPV
Description
The RBE015N10R1SZPV n-channel power MOSFET features REXFET‑1 split‑gate technology and is available in a TOLG package. The TOLG package is footprint‑compatible with the TOLL package and uses gullwing leads to achieve superior thermal cycling capability.
Renesas’ REXFET‑1 split‑gate technology is well‑suited for applications requiring low RDS(on) and high switching performance, making it ideal for high‑power and high‑frequency applications.