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Renesas Electronics Corporation
100V, 340A, 1.5mΩ N-Channel Automotive REXFET‑1 Power MOSFET in TOLG Package

Package Information

CAD Model:View CAD Model
Pkg. Type:TOLG
Pkg. Code:
Lead Count (#):8
Pkg. Dimensions (mm):9.90 x 11.70 x 2.50
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
ECCN (US)EAR99
HTS (US)8541.29.0095
RoHS (RBA300N10EHPF-5UA02#GB0)EnglishJapanese
Pb (Lead) FreeYes

Product Attributes

Pkg. TypeTOLG
Standard Pkg. TypeTOLG
Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)1
Assembly LocationMALAYSIA
Wafer Fab LocationJAPAN
ApplicationAutomotive, Industrial Use
Automotive Qual.Yes
Channels (#)1
Ciss (Typical) (pF)13000
FunctionPower MOSFETs
Gate LevelStandard
ID (A)340
Id max @ 25°C (A)340
Lead CompliantNo
Lead Count (#)8
Length (mm)11.7
MOQ1500
Mounting TypeSurface Mount
Nch/PchNch
Pb (Lead) FreeYes
Pch (W)468
Pkg. Dimensions (mm)9.90 x 11.70 x 2.50
Price (USD)$2.15556
Qg typ (nC)170
Qualification LevelAutomotive
RDS (ON) (Max) @10V (mohm)1.5
RDS (ON) (Typical) @ 10V / 8V (mohm)1.3
Series NameREXFET-1
Simulation Model AvailableYes
Tape & ReelYes
Target applicationsSmall Traction, 48V load, OBC, Charging station, LDC, Energy infrastructure, Micro inverter, Power-tool, DC-DC, etc.
VDSS (Max) (V)100
VGSS (V)20
Vgs (off) (Max) (V)4
Width (mm)9.9

Description

The RBA300N10EHPF-5UA02 n-channel power MOSFET features REXFET-1 split-gate technology and is available in a TOLG package. The TOLG package is footprint-compatible with the TOLL package and applies gullwing leads to achieve superior thermal cycling capability.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and high switching performance, making it ideal for high-power and high-frequency applications.