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REXFET-1 N-Channel Power MOSFET 100V-340A-1.5mΩ

Package Information

CAD Model:View CAD Model
Pkg. Type:TOLG
Pkg. Code:
Lead Count (#):8
Pkg. Dimensions (mm):9.90 x 11.70 x 2.50
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
ECCN (US)EAR99
HTS (US)8541.29.0095
RoHS (RBA300N10EHPF-5UA02#GB0)EnglishJapanese
Pb (Lead) FreeYes

Product Attributes

Pkg. TypeTOLG
Standard Pkg. TypeTOLG
Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)1
Country of AssemblyMALAYSIA
Country of Wafer FabricationJAPAN
ApplicationAutomotive, Industrial Use
Automotive Qual.Yes
Channels (#)1
Ciss (Typical) (pF)13000
FunctionPower MOSFETs
Gate LevelStandard
ID (A)340
Id max @ 25°C (A)340
Lead CompliantNo
Lead Count (#)8
Length (mm)11.7
MOQ1500
Mounting TypeSurface Mount
Nch/PchNch
Pb (Lead) FreeYes
Pch (W)468
Pkg. Dimensions (mm)9.90 x 11.70 x 2.50
Price (USD)$2.31642
Qg typ (nC)170
Qualification LevelAutomotive
RDS (ON) (Max) @10V (mohm)1.5
RDS (ON) (Typical) @ 10V / 8V (mohm)1.3
Series NameREXFET-1
Simulation Model AvailableYes
Tape & ReelYes
Target applicationsSmall Traction, 48V load, OBC, Charging station, LDC, Energy infrastructure, Micro inverter, Power-tool, DC-DC, etc.
VDSS (Max) (V)100
VGSS (V)20
Vgs (off) (Max) (V)4
Width (mm)9.9

Description

Renesas TOLG technology features ultra-compact, gullwing lead designs that are compatible with the TOLL footprint, offering enhanced thermal performance and management, as well as improved thermal cycling on-board performance. Renesas' split gate technology is suitable for applications requiring low RDS(on) and switching capabilities, making it ideal for high power and high-frequency applications.