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Renesas Electronics Corporation
NEW
80V, 360A, 1.06mΩ, REXFET-1 N-Channel Power MOSFET in TOLT for Automotive

Package Information

CAD Model:View CAD Model
Pkg. Type:TOLT
Pkg. Code:
Lead Count (#):16
Pkg. Dimensions (mm):9.90 x 15.00 x 2.30
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
ECCN (US)
HTS (US)8541.29.0095
RoHS (RBA011N08R1SBPW#KB0)EnglishJapanese

Product Attributes

Pkg. TypeTOLT
Lead Count (#)16
Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
Channels (#)1
Channels per device (#)1
Ciss (Typical) (pF)18000
Country of AssemblyCHINA
Country of Wafer FabricationJAPAN
FunctionPower MOSFETs
Gate LevelStandard
ID (A)360
Id max @ 25°C (A)360
Lead CompliantNo
Length (mm)15
MOQ1300
Mounting TypeSurface Mount
Nch/PchNch
Pch (W)535
Pkg. Dimensions (mm)9.90 x 15.00 x 2.30
Qg typ (nC)250
Qualification LevelAutomotive
RDS (ON) (Max) @10V (mohm)1.06
RDS (ON) (Typical) @ 10V / 8V (mohm)0.95
Series NameREXFET-1
Simulation Model AvailableYes
Standard Pkg. TypeTOLT
Tape & ReelYes
Thickness (mm)2.3
VDSS (Max) (V)80
VGSS (V)20
Vgs (off) (Max) (V)4
Width (mm)9.9

Description

The RBA011N08R1SBPW N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLT package. The TOLT package features top-side cooling for thermal performance, reliability, and ease of assembly.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.