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Renesas Electronics Corporation
Synchronous Rectified Buck MOSFET Driver

Package Information

CAD Model:View CAD Model
Pkg. Type:DFN
Pkg. Code:LBP
Lead Count (#):8
Pkg. Dimensions (mm):2.0 x 2.0 x 0.90
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
ECCN (US)EAR99
HTS (US)8542.39.0090
RoHS (RAA220001GNP#HA0)Download

Product Attributes

Lead Count (#)8
Carrier TypeReel
Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
Pb Free CategoryPb-Free 100% Matte Tin Plate w/Anneal-e3
Country of AssemblyMALAYSIA
Country of Wafer FabricationTAIWAN
IS (mA)7
Length (mm)2
MOQ6000
No Load IS (Max)N/A
Output Per Driver LGATE Source|Sink1.75|3
Output Per Driver UGATE Source|Sink1.25|2
Parametric CategoryMultiphase DC/DC Switching Controllers
Phase Voltage (Max)25VDC, 30V (<200ns)
Phase Voltage (Min)GND - 0.3VDC GND - 8V (<400ns)
Pkg. Dimensions (mm)2.0 x 2.0 x 0.90
Pkg. TypeDFN
Qualification LevelStandard
Temp. Range (°C)-40 to +105°C
Thickness (mm)0.9
VDRIVE (V) (V)6 - 6
VIN/VPWM (Max)15
Width (mm)2

Description

The RAA220001 is a high frequency MOSFET driver designed to drive upper and lower power N-channel MOSFETs in a synchronous rectified buck converter topology. In the RAA220001, the upper and lower gates are both driven to an externally applied voltage that provides the capability to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The RAA220001 has a 10kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt. This driver also has an overvoltage protection feature that is operational while VCC is below the POR threshold. The PHASE node is connected to the gate of the low-side MOSFET (LGATE) through a 30kΩ resistor, limiting the output voltage of the converter close to the gate threshold of the low-side MOSFET. This design is dependent on the current being shunted, which provides some protection to the load should the upper MOSFET(s) become shorted.