Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | SOJ |
| Pkg. Code: | pkg_475 |
| Lead Count (#): | 44 |
| Pkg. Dimensions (mm): | 28 x 10 x 3.55 |
| Pitch (mm): | 1.27 |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 2 |
| ECCN (US) | 3A991.b.2.a |
| HTS (US) | 8542.32.0041 |
| RoHS (R1RW0416DGE-2LR#B0) | EnglishJapanese |
| Pb (Lead) Free | Yes |
Product Attributes
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | 2 |
| Access Time (ns) | 12 |
| Lead Compliant | Yes |
| Lead Count (#) | 44 |
| Length (mm) | 28 |
| MOQ | 1 |
| Memory Capacity (kbit) | 4000 |
| Organization | 256K x 16 |
| Organization (bit) | x 16 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 28 x 10 x 3.55 |
| Pkg. Type | SOJ |
| Remarks | Contact us for Successor Products information. |
| Replacement Product | R1RW0416DGE-2LR#B1 |
| Supply Voltage (V) | 3 - 3.6 |
| Tape & Reel | No |
| Thickness (mm) | 3.55 |
| Width (mm) | 10 |
Resources for R1RW0416D-R
Description
The R1RW0416D is a 4Mbit high-speed static RAM organized 256-kword × 16-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory, and a wide bit width configuration, such as cache and buffer memory in systems. Especially, the L version and S version are low-power consumption and are the best for the battery backup systems. The package prepares a 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high-density surface mounting.