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4M High-speed SRAM (512-kword × 8-bit)

Package Information

CAD Model:View CAD Model
Pkg. Type:SOJ
Pkg. Code:pkg_474
Lead Count (#):36
Pkg. Dimensions (mm):23.39 x 10.16 x 3.55
Pitch (mm):1.27

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)2
RoHS (R1RW0408DGE-2PR#B0)EnglishJapanese
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

Product Attributes

Carrier TypeTube
Moisture Sensitivity Level (MSL)2
Access Time (ns)12
Bus Width (bits)8
Core Voltage (V)3.3V
Density (Kb)4096
I/O Voltage (V)3.3
Lead CompliantYes
Lead Count (#)36
Length (mm)23
MOQ1
Memory Capacity (kbit)4000
Organization512K x 8
Organization (bit)x 8
Pb (Lead) FreeYes
Pkg. Dimensions (mm)23 x 10 x 3.55
Pkg. TypeSOJ
RemarksContact us for Successor Products information.
Replacement ProductR1RW0408DGE-2PR#B1
Supply Voltage (V)3 - 3.6
Tape & ReelNo
Thickness (mm)3.55
Width (mm)10

Description

The R1RW0408D is a 4Mbit high-speed static RAM organized as 512-kword × 8-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high-density surface mounting.