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4M High-Speed SRAM (256-kword × 16-bit)

Package Information

CAD Model: View CAD Model
Pkg. Type: SOJ
Pkg. Code: pkg_475
Lead Count (#): 44
Pkg. Dimensions (mm): 28.47 x 10.16 x 3.55
Pitch (mm): 1.27

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) 3
ECCN (US) 3A991.b.2.a
HTS (US) 8542.32.0041
RoHS (R1RP0416DGE-2LR#B1) EnglishJapanese
Pb (Lead) Free Yes

Product Attributes

Carrier Type Tube
Moisture Sensitivity Level (MSL) 3
Country of Assembly TAIWAN
Country of Wafer Fabrication JAPAN
Access Time (ns) 12
Bus Width (bits) 16
Core Voltage (V) 5V
Density (Kb) 4096
I/O Voltage (V) 5
Lead Compliant Yes
Lead Count (#) 44
Length (mm) 28
MOQ 1
Memory Capacity (kbit) 4000
Organization 256K x 16
Organization (bit) x 16
Pb (Lead) Free Yes
Pkg. Dimensions (mm) 28 x 10 x 3.55
Pkg. Type SOJ
Price (USD) $6.08
Remarks Contact us for Successor Products information.
Supply Voltage (V) 4.5 - 5.5
Tape & Reel No
Thickness (mm) 3.55
Width (mm) 10

Description

The R1RP0416D Series is a 4Mbit high-speed static RAM organized as 256-kword × 16-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. It is packaged in a 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.