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Renesas Electronics Corporation
Wide Temperature Range Version 4M High-Speed SRAM (256-kword × 16-bit)

Package Information

CAD Model:View CAD Model
Pkg. Type:TSOP(2)
Pkg. Code:pkg_470
Lead Count (#):44
Pkg. Dimensions (mm):18 x 10 x 1.2
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)2
RoHS (R1RP0416DSB-0PI#D0)EnglishJapanese
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

Product Attributes

Carrier TypeTray
Moisture Sensitivity Level (MSL)2
Access Time (ns)10
Lead CompliantYes
Lead Count (#)44
Length (mm)18
MOQ1
Memory Capacity (kbit)4000
Organization256K x 16
Organization (bit)x 16
Pb (Lead) FreeYes
Pkg. Dimensions (mm)18 x 10 x 1.2
Pkg. TypeTSOP(2)
Replacement ProductR1RP0416DSB-0PI#D1
Supply Voltage (V)4.5 - 5.5
Tape & ReelNo
Thickness (mm)1.2
Width (mm)10

Description

The R1RP0416DI is a 4Mbit high-speed static RAM organized as 256-kword × 16-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.