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Renesas Electronics Corporation
4M High-Speed SRAM (512-kword × 8-bit)

Package Information

CAD Model:View CAD Model
Pkg. Type:SOJ
Pkg. Code:pkg_474
Lead Count (#):36
Pkg. Dimensions (mm):23 x 10 x 3.55
Pitch (mm):1.27

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
RoHS (R1RP0408DGE-2PR#B1)EnglishJapanese
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

Product Attributes

Carrier TypeTube
Moisture Sensitivity Level (MSL)3
Country of AssemblyTAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)12
Bus Width (bits)8
Core Voltage (V)5V
Density (Kb)4096
I/O Voltage (V)5
Lead CompliantYes
Lead Count (#)36
Length (mm)23
MOQ1
Memory Capacity (kbit)4000
Organization512K x 8
Organization (bit)x 8
Pb (Lead) FreeYes
Pkg. Dimensions (mm)23 x 10 x 3.55
Pkg. TypeSOJ
Price (USD)$6.38227
RemarksContact us for Successor Products information.
Supply Voltage (V)4.5 - 5.5
Tape & ReelNo
Thickness (mm)3.55
Width (mm)10

Description

The R1RP0408D Series is a 4Mbit high-speed static RAM organized 512-k word × 8-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. It is packaged in a 400-mil 36-pin plastic SOJ.