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Renesas Electronics Corporation
2Mb Advanced LPSRAM (256k word x 8bit)

Package Information

CAD Model:View CAD Model
Pkg. Type:sTSOP(32)
Pkg. Code:pkg_11617
Lead Count (#):32
Pkg. Dimensions (mm):12 x 8 x 1.2
Pitch (mm):0.5

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041
RoHS (R1LV0208BSA-5SI#S1)EnglishJapanese
Pb (Lead) FreeYes

Product Attributes

Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)3
Country of AssemblyMALAYSIA, TAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)55
Density (Kb)2000
Lead CompliantYes
Lead Count (#)32
Length (mm)12
Longevity2032 Dec
MOQ1000
Memory Capacity (kbit)2000
Memory Density2
Organization256K x 8
Organization (bit)x 8
Organization (kword)256
Pb (Lead) FreeYes
Pkg. Dimensions (mm)12 x 8 x 1.2
Pkg. TypesTSOP(32)
Price (USD)$2.64743
RemarksDual Chip Select (CS1#, CS2)
Replacement Remarkconsolidation of part-names and/or assembly material change
Supply Voltage (V)2.7 - 3.6
Tape & ReelNo
Temp. Range (°C)-40 to +85
Thickness (mm)1.2
Width (mm)8

Description

The R1LV0208BSA is a low-voltage, 2-Mbit static RAM organized as 262, 144-word by 8-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LV0208BSA realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. The R1LV0208BSA is packaged in a 32-pin sTSOP.