Skip to main content
271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application

Package Information

CAD Model:View CAD Model
Pkg. Type:
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

RoHS (NX8350TS31-AZ)EnglishJapanese
Moisture Sensitivity Level (MSL)
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

Product Attributes

Ith (Typical) (mA)8
Lead CompliantNo
MOQ1
Pb (Lead) FreeYes
Pf / Po (Typical) (mW)1.6
Remarksλp=1271nm, 1291nm, 1311nm, 1331nm
Tape & ReelNo
Target applicationsSTM-64, 40G BASE-LR4
Tstg (Max) (°C)95
Tstg (Min) (°C)-40
Λp (Typical) for BD (nm)1311

Description

The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSAs (transmitter optical subassembly) with InGaAs monitor PIN-PD in an LC receptacle type package designed for CFP transceiver.