Features
- Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
- Super low on-state resistance NP90N055MUH, NP90N055NUH RDS(on) = 5.8 mΩ MAX. (VGS = 10 V, ID = 45 A) NP90N055PUH RDS(on) = 5.4 mΩ MAX. (VGS = 10 V, ID = 45 A)
- High avalanche energy, High avalanche current
- Low input capacitance Ciss = 6200 pF TYP. (VDS = 25 V)
Description
The NP90N055MUH, NP90N055NUH, NP90N055PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.
Applied Filters: