Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
- Low input capacitance Ciss = 7600 pF TYP.
- Built-in gate protection diode
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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