Features
- Logic level
- Built-in gate protection diode
- Super low on-state resistance NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) NP80N04PLG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- High current rating ID(DC) = ±80 A
- Low input capacitance Ciss = 4600 pF TYP.
- Designed for automotive application and AEC-Q101 qualified
Description
Support is limited to customers who have already adopted these products.
The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-263 / D2PAK |
| VDSS (Max) (V) | 40 |
| ID (A) | 80 |
| RDS (ON) (Max) @10V or 8V (mohm) | 4.5 |
| RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm) | 8.7 |
| Pch (W) | 115 |
| Ciss (Typical) (pF) | 4600 |
| Qg typ (nC) | 90 |
| Series Name | NP Series |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| MP-25ZP | 10 x 9 x 4.9 | 3 |
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