Features
- Super low on-state resistance RDS(on)1 = 7.9 mΩ MAX. (VGS = 10 V, ID = 30 A)
- Low Ciss: Ciss = 2400 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
Description
NP60N06PLK is N-channel MOS Field Effect Transistor designed for high current switching applications.
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