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Radiation Hardened 12V Half-Bridge GaN FET Driver

Package Information

CAD Model: View CAD Model
Pkg. Type: DIE
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
Pb (Lead) Free No
ECCN (US) EAR99
HTS (US) 8542.39.0090

Product Attributes

Pkg. Type DIE
Qualification Level EM
Pb (Lead) Free No
MOQ 10
Temp. Range (°C) -55 to +125°C
CAGE code 34371
Bus Voltage (Max) (V) 12
DSEE (MeV·cm2/mg) 86
Die Sale Availability? Yes
Driver Type Half Bridge
Drivers (#) 2
FET Type GaNFET
Fall Time 26
Flow RH Hermetic
Gate Drive (V) 4.5
High Side Fall Time (max) (ns) 26
High Side Rise Time (max) (ns) 29
Input VCC (Max) (V) 13.2
Input VCC (Min) (V) 4.75
Input Voltage (Max) (V) 13.2
Input Voltage (Min) (V) 4.75
Low Side Fall Time (max) (ns) 30
Low Side Rise Time (max) (ns) 36
Models Available PSPICE, ISIM
Output Type Synchronous
PROTO Availability? Yes
Peak Output Sink Current (A) 4 (HS) /8 (LS)
Peak Output Source Current (A) 2 (HS) /4 (LS)
Peak Sink Current (A) 4A, 8A
Peak Source Current (A) 2A, 4A
Rating Space
Rise Time (Max) 29
Supply Voltage (V) 4.75 - 13.2
TID LDR (krad(Si)) 75
Turn-On Prop Delay (ns) 29

Description

The ISL73041SEH is a PWM input 12V half-bridge GaN FET driver designed to drive low rDS(ON), high QGS enhance mode Gallium Nitride (eGaN) FETs up to 1.5MHz operation for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and high gate drive current provide a compact and robust GaN FET half-bridge driver.

The ISL73041SEH is designed to interface directly to the ISL73847SEH dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low-voltage high-current FPGA and DSP digital core rails.

The ISL73041SEH is offered in a 16 Ld Ceramic Leadless Chip Carrier (CLCC) hermetic package. It is specified to operate across an ambient temperature range of -55°C to +125°C.