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Renesas Electronics Corporation
Radiation Hardened 12V Half-Bridge GaN FET Driver

Package Information

CAD Model:View CAD Model
Pkg. Type:DIE
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
Pb (Lead) FreeNo
ECCN (US)EAR99
HTS (US)8542.39.0090

Product Attributes

Pkg. TypeDIE
Qualification LevelEM
Pb (Lead) FreeNo
MOQ10
Temp. Range (°C)-55 to +125°C
CAGE code34371
Bus Voltage (Max) (V)12
DSEE (MeV·cm2/mg)86
Die Sale Availability?Yes
Driver TypeHalf Bridge
Drivers (#)2
FET TypeGaNFET
Fall Time26
FlowRH Hermetic
Gate Drive (V)4.5
High Side Fall Time (max) (ns)26
High Side Rise Time (max) (ns)29
Input VCC (Max) (V)13.2
Input VCC (Min) (V)4.75
Input Voltage (Max) (V)13.2
Input Voltage (Min) (V)4.75
Low Side Fall Time (max) (ns)30
Low Side Rise Time (max) (ns)36
Models AvailablePSPICE, ISIM
Output TypeSynchronous
PROTO Availability?Yes
Peak Output Sink Current (A)4 (HS) /8 (LS)
Peak Output Source Current (A)2 (HS) /4 (LS)
Peak Sink Current (A)4A, 8A
Peak Source Current (A)2A, 4A
RatingSpace
Rise Time (Max)29
Supply Voltage (V)4.75 - 13.2
TID LDR (krad(Si))75
Turn-On Prop Delay (ns)29

Description

The ISL73041SEH is a PWM input 12V half-bridge GaN FET driver designed to drive low rDS(ON), high QGS enhance mode Gallium Nitride (eGaN) FETs up to 1.5MHz operation for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and high gate drive current provide a compact and robust GaN FET half-bridge driver.

The ISL73041SEH is designed to interface directly to the ISL73847SEH dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low-voltage high-current FPGA and DSP digital core rails.

The ISL73041SEH is offered in a 16 Ld Ceramic Leadless Chip Carrier (CLCC) hermetic package. It is specified to operate across an ambient temperature range of -55°C to +125°C.