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Radiation Hardened 12V Half-Bridge GaN FET Driver

Package Information

CAD Model: View CAD Model
Pkg. Type: QFN
Pkg. Code: LAG
Lead Count (#): 20
Pkg. Dimensions (mm): 5.00 x 5.00 x 0.90
Pitch (mm): 0.65

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
ECCN (US) EAR99
HTS (US) 8542.39.0090
RoHS (ISL71441SLHMRZ) Download

Product Attributes

Pkg. Type QFN
Lead Count (#) 20
Carrier Type Tray
Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
Pb Free Category Nickel/Palladium/Gold-Silver - e4
MOQ 25
Temp. Range (°C) -55 to +125°C
CAGE code 34371
Bus Voltage (Max) (V) 12
DSEE (MeV·cm2/mg) 86
Die Sale Availability? No
Driver Type Half Bridge
Drivers (#) 2
FET Type GaNFET
Fall Time 25
Flow RH Plastic
Gate Drive (V) 4.5
High Side Fall Time (max) (ns) 25
High Side Rise Time (max) (ns) 25
Input VCC (Max) (V) 13.2
Input VCC (Min) (V) 4.75
Length (mm) 5
Low Side Fall Time (max) (ns) 30
Low Side Rise Time (max) (ns) 34
Models Available PSPICE, ISIM
Output Type Synchronous
PROTO Availability? No
Peak Output Sink Current (A) 4 (HS) /8 (LS)
Peak Output Source Current (A) 2 (HS) /4 (LS)
Peak Sink Current (A) 4A, 8A
Peak Source Current (A) 2A, 4A
Pitch (mm) 0.7
Pkg. Dimensions (mm) 5.0 x 5.0 x 0.90
Qualification Level PEMS
Rating Space
Rise Time (Max) 26
Supply Voltage (V) 4.75 - 13.2
TID LDR (krad(Si)) 75
Thickness (mm) 0.9
Turn-On Prop Delay (ns) 29
Width (mm) 5

Description

The ISL71441SLH is a radiation hardened PWM input 12V half-bridge GaN FET driver that drives low rDS(ON) Gallium Nitride (GaN) FETs for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a compact and robust GaN FET half-bridge driver.

The ISL71441SLH can interface directly to the ISL73847SLH dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low-voltage high-current FPGA and DSP digital core rails.