Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | CLCC |
| Pkg. Code: | JSC |
| Lead Count (#): | 4 |
| Pkg. Dimensions (mm): | 9.0 x 4.7 x 1.83 |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Pb (Lead) Free | Yes |
| ECCN (US) | 9A515.e.1 |
| HTS (US) | 8542.39.0090 |
Product Attributes
| Pkg. Type | CLCC |
| Lead Count (#) | 4 |
| Carrier Type | Tray |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Qualification Level | Class Ve |
| Pb (Lead) Free | Yes |
| Pb Free Category | Gold Plate over compliant Undercoat-e4 |
| MOQ | 25 |
| Temp. Range (°C) | -55 to +125°C |
| CAGE code | 34371 |
| Application | Switching regulation, Relay and Motor drives, Down hole drilling, High reliability industrial, Inrush protection |
| DSEE (MeV·cm2/mg) | 86 |
| Die Sale Availability? | Yes |
| Flow | RH Hermetic |
| Function | Very low rDS(ON) 3.5mΩ (typical), Ultra low total gate charge 19nC (typical), Radiation acceptance testing, SEE hardness, Ultra small hermetically sealed 4 Ld SMD package |
| IDS (A) | 65 |
| Length (mm) | 9 |
| Models Available | SPICE |
| PROTO Availability? | Yes |
| Pkg. Dimensions (mm) | 9.0 x 4.7 x 1.83 |
| Product Category | Rad Hard GaN FETs |
| Qg typ (nC) | 19 |
| RDSON (Typ) (mΩ) | 3.5 |
| Rating | Space |
| TID HDR (krad(Si)) | 100 |
| TID LDR (krad(Si)) | 75 |
| Thermal Resistance θJC (°C/W) | 3.1 |
| Thickness (mm) | 1.83 |
| VDS (V) | 40 |
| VGS (Max) (V) | 6 |
| VGS(TH) (Max) (V) | 2.5 |
| Width (mm) | 4.7 |
Resources for ISL70020SEH
Description
The ISL70020SEH is a 40V N-channel enhancement mode GaN power transistor. This GaN FET has been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.