Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | SOICN |
| Pkg. Code: | MSU |
| Lead Count (#): | 14 |
| Pkg. Dimensions (mm): | 8.69 x 3.94 x 0.00 |
| Pitch (mm): | 1.27 |
Environmental & Export Classifications
| Pb (Lead) Free | No |
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) | |
| HTS (US) |
Product Attributes
| Lead Count (#) | 14 |
| Carrier Type | Reel |
| Pb (Lead) Free | No |
| Temp. Range (°C) | 0 to +70°C |
| Bias Voltage Range (V) | 3.3 - 5 |
| IS (Typical) | 3.3 |
| Input Voltage (Max) (V) | 5 |
| Input Voltage (Max) [Rail 1] (V) | 5 - 5 |
| Input Voltage (Min) (V) | 2.5 |
| Input Voltage (Min) [Rail 1] (V) | 2.5 |
| Length (mm) | 8.7 |
| MOQ | 2500 |
| Output Voltage (Max) (V) | 5 |
| Output Voltage (Min) (V) | 0.8 |
| Output Voltage (Min) [Rail 1] (V) | 0.8 |
| Parametric Category | Buck Controllers (External FETs) |
| Pitch (mm) | 1.3 |
| Pkg. Dimensions (mm) | 8.7 x 3.9 x 0.00 |
| Pkg. Type | SOICN |
| Qualification Level | Standard |
| Topology [Rail 1] | Buck |
| VBIAS (Max) (V) | 5 |
| VBIAS (Min) (V) | 3.3 |
| Width (mm) | 3.9 |
Resources for ISL6527A
Description
Support is limited to customers who have already adopted these products.
The ISL6527, ISL6527A make simple work out of implementing a complete control and protection scheme for a DC/DC step-down converter. Designed to drive N-Channel MOSFETs in a synchronous buck topology, the ISL6527, ISL6527A integrate the control, output adjustment, monitoring and protection functions into a single package. The ISL6527, ISL6527A provide simple, single feedback loop, voltage-mode control with fast transient response. The output voltage can be regulated to as low as the provided external reference. A fixed frequency oscillator reduces design complexity, while balancing typical application cost and efficiency. The error amplifier features a 15MHz gain-bandwidth product and 6V/µs slew rate, which enables high converter bandwidth for fast transient performance. The resulting PWM duty cycles range from 0% to 100%. Protection from overcurrent conditions is provided by monitoring the rDS(ON) of the upper MOSFET to inhibit PWM operation appropriately. This approach simplifies the implementation and improves efficiency by eliminating the need for a current sense resistor.