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Renesas Electronics Corporation
100V, 2A Peak, High Frequency Half-Bridge Drivers

Package Information

CAD Model:View CAD Model
Pkg. Type:DFN
Pkg. Code:LNH
Lead Count (#):9
Pkg. Dimensions (mm):3.0 x 3.0 x 0.90
Pitch (mm):0.5

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)2
Pb (Lead) FreeYes
ECCN (US)EAR99
HTS (US)8542.39.0090
RoHS (ISL2101AAR3Z-T)Download

Product Attributes

Lead Count (#)9
Carrier TypeReel
Moisture Sensitivity Level (MSL)2
Pitch (mm)0.5
Pkg. Dimensions (mm)3.0 x 3.0 x 0.90
Pb (Lead) FreeYes
Pb Free CategoryPb-Free 100% Matte Tin Plate w/Anneal-e3
Temp. Range (°C)-40 to +85°C
Country of AssemblyMALAYSIA
Country of Wafer FabricationUSA
Bootstrap Supply Voltage (Max) (V)114
Charge PumpNo
Fall Time10
Input Logic Level3.3V/TTL
Length (mm)3
MOQ6000
Parametric CategoryHalf-Bridge FET Drivers
Peak Pull-down Current (A)2
Peak Pull-up Current (A)2
Pkg. TypeDFN
Qualification LevelStandard
Rise Time (μs)0.01
Thickness (mm)0.9
Turn-Off Prop Delay (ns)34
Turn-On Prop Delay (ns)39
VBIAS (Max) (V)14
Width (mm)3

Description

The ISL2100A, ISL2101A are 100V, high frequency, half-bridge N-channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. The ISL2100A has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL2101A, like those of the ISL2100A, can now safely swing to the VDD supply rail. Finally, both parts are available in a very compact 9 Ld DFN package to minimize the required PCB footprint.