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Complementary Switch MOSFET Driver

Package Information

CAD Model: View CAD Model
Pkg. Type: CFP
Pkg. Code: KBX
Lead Count (#): 16
Pkg. Dimensions (mm): 10.41 x 6.86 x 0.00
Pitch (mm): 1.27

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) Not Applicable
Pb (Lead) Free Exempt
ECCN (US) 9A515.e.1
HTS (US) 8542.39.0090

Product Attributes

Pkg. Type CFP
Lead Count (#) 16
Carrier Type Tray
Moisture Sensitivity Level (MSL) Not Applicable
Qualification Level Class V
Pitch (mm) 1.3
Pkg. Dimensions (mm) 10.4 x 6.9 x 0.00
DLA SMD 5962F0052101VXC
Pb (Lead) Free Exempt
Pb Free Category Gold Plate over compliant Undercoat-e4
MOQ 25
Temp. Range (°C) -55 to +125°C
CAGE code 34371
DSEE (MeV·cm2/mg) 90
Die Sale Availability? Yes
Driver Type Low Side
Drivers (#) 2
FET Type MOSFET
Fall Time 50
Flow RH Hermetic
Input VCC (Max) (V) 18
Input VCC (Min) (V) 10
Length (mm) 10.4
Low Side Fall Time (max) (ns) 50
Low Side Rise Time (max) (ns) 50
Output Type Complementary
PROTO Availability? Yes
Peak Output Current IPK (A) 3
Peak Output Sink Current (A) 3
Peak Output Source Current (A) 3
Rating Space
Rise Time (Max) 50
SMD URL 5962-00521
TID HDR (krad(Si)) 300
Width (mm) 6.9

Description

The radiation hardened IS-1715ARH and IS-1715AEH are high-speed, high current, complementary power FET drivers designed for use in synchronous rectification circuits. Soft switching transitions for the two output waveforms can be managed by setting the independently programmable delays. Alternatively, the delay pins can be configured for zero-voltage sensing to allow for precise switching control. The IS-1715ARH and IS-1715AEH have a single input, which is PWM and TTL compatible, and can run at frequencies up to 1MHz. The AUX output switches immediately at the rising edge of the INPUT, but waits for the T2 delay before responding to the falling edge. A logic low on the enable pin (ENBL) places both outputs into an active-low mode, and an Undervoltage Lockout (UVLO) function is set at 9V (maximum). These devices are constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) process and are immune to Single Event Latch-Up (SEL). They have been specifically designed to provide highly reliable performance in harsh radiation environments.