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Radiation Hardened Full Bridge N-Channel FET Driver

Package Information

CAD Model: View CAD Model
Pkg. Type: CFP
Pkg. Code: KBU
Lead Count (#): 20
Pkg. Dimensions (mm): 12.70 x 7.49 x 0.00
Pitch (mm): 1.27

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) Not Applicable
Pb (Lead) Free Exempt
ECCN (US) 9A515.e.1
HTS (US) 8542.39.0090

Product Attributes

Pkg. Type CFP
Lead Count (#) 20
Carrier Type Tray
Moisture Sensitivity Level (MSL) Not Applicable
Pitch (mm) 1.3
Pkg. Dimensions (mm) 12.7 x 7.5 x 0.00
Qualification Level EM
Pb (Lead) Free Exempt
Pb Free Category Gold Plate over compliant Undercoat-e4
MOQ 1
Temp. Range (°C) -55 to +125°C
CAGE code 34371
Bus Voltage (Max) (V) 80
Die Sale Availability? Yes
Driver Type Full Bridge
Drivers (#) 1
FET Type MOSFET
Fall Time 60
Flow RH Hermetic
High Side Fall Time (max) (ns) 80
High Side Rise Time (max) (ns) 65
Input VCC (Max) (V) 15
Input VCC (Min) (V) 12
Length (mm) 12.7
Low Side Fall Time (max) (ns) 80
Low Side Rise Time (max) (ns) 65
Output Type Synchronous
PROTO Availability? Yes
Peak Output Current IPK (A) 2.5
Peak Output Sink Current (A) 2.5
Peak Output Source Current (A) 2.5
Rating Space
Rise Time (Max) 65
SMD URL 5962-99617
TID HDR (krad(Si)) 300
TID LDR (krad(Si)) 50
Width (mm) 7.5

Description

The HS-4080AEH is a monolithic, high frequency, medium voltage Full Bridge N-Channel FET Driver IC. The device includes a TTL-level input comparator, which can be used to facilitate the “hysteresis” and PWM modes of operation. Its HEN (High Enable) lead can force current to freewheel in the bottom two external power MOSFETs, maintaining the upper power MOSFETs off. The HS-4080AEH is well suited for use in distributed DC power supplies and DC/DC converters, since it can switch at high frequencies. This device can also drive medium voltage motors and two HS-4080AEHs can be used to drive high-performance stepper motors, since the short minimum “on-time” can provide fine micro-stepping capability. Short propagation delays maximize control loop crossover frequencies and dead times, which can be adjusted to near zero to minimize distortion, resulting in precise control of the driven load. Constructed with the Intersil dielectrically isolated radiation hardened Silicon Gate (RSG) process, this device is immune to single event latch-up and has been specifically designed to provide highly reliable performance in harsh radiation environments. Complete your design with radiation hardened MOSFETs from Intersil. Detailed Electrical Specifications for these devices are contained in SMD 5962-99617.