Package Information
| Pitch (mm) | 2.54 |
| Lead Count (#) | 3 |
| Pkg. Type | CAN |
| Pkg. Dimensions (mm) | 16.64 x 10.54 x 3.05 |
| Pkg. Code | TKA |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Pb (Lead) Free | No |
| ECCN (US) | 9A515 |
| HTS (US) |
Product Attributes
| Pkg. Type | CAN |
| Lead Count (#) | 3 |
| Carrier Type | Tray |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Pitch (mm) | 2.5 |
| Pkg. Dimensions (mm) | 16.6 x 10.5 x 3.05 |
| DLA SMD | 5962F9954702VXC |
| Pb (Lead) Free | No |
| Pb Free Category | Gold Plate over compliant Undercoat-e4 |
| MOQ | 25 |
| Temp. Range | -55 to +125°C |
| DSEE (MeV·cm2/mg) | 87.4 |
| Die Sale Availability? | Yes |
| Flow | RH Hermetic |
| IOUT (A) | 1.25 |
| IOUT (Max) (mA) | 1250 |
| Length (mm) | 16.6 |
| Output Options | Adjustable |
| Output Voltage (Max) (V) | 37 |
| Output Voltage (Min) (V) | 1.25 |
| PROTO Availability? | Yes |
| Qualification Level | Class V |
| Rating | Space |
| SMD URL | |
| Supply Voltage (max) (V) | 40 - 40 |
| Supply Voltage (min) (V) | 4.25 - 4.25 |
| TID HDR (krad(Si)) | 300 |
| TID LDR (krad(Si)) | 50 |
| Thickness (mm) | 3.05 |
| VDO @ IOUTMAX (Typ) (V) | 4000 |
| VOUT (max) (V) | 37 |
| VOUT (min) (V) | 1.25 |
| Width (mm) | 10.5 |
Description
The radiation hardened HS-117RH and HS-117EH are adjustable positive voltage linear regulators capable of operating with input voltages up to 40VDC. The HS-117EH encompasses all of the production testing of the HS-117RH and additionally is tested in the Enhanced Low Dose Rate Sensitivity (ELDRS) product manufacturing flow. The output voltage is adjustable from 1.25V to 37V with two external resistors. The device is capable of sourcing from 5mA to 1.25A max (0.5A max for the TO-39 package). Current protection is provided by the on-chip thermal shutdown and output current limiting circuitry. The HS-117xH's advantage over other industry types is its incorporated circuitry that minimizes the effects of radiation and temperature on device stability. The HS-117RH and HS-117EH are constructed in the dielectrically isolated Rad Hard Silicon Gate (RSG) process and are immune to single event latch-up and are specifically designed to provide highly reliable performance in harsh radiation environments.