Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | SOICN |
| Pkg. Code: | MSU |
| Lead Count (#): | 14 |
| Pkg. Dimensions (mm): | 8.69 x 3.94 x 0.00 |
| Pitch (mm): | 1.27 |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | |
| Pb (Lead) Free | No |
| ECCN (US) | |
| HTS (US) |
Product Attributes
| Pkg. Type | SOICN |
| Carrier Type | Reel |
| MOQ | 2500 |
| Bias Voltage Range (V) | 12 - 12 |
| IS (Typical) | 5 |
| Input Voltage (Max) (V) | 12 |
| Input Voltage (Min) (V) | 2.5 |
| Lead Count (#) | 14 |
| Length (mm) | 8.7 |
| Output Current (Max) [Rail 1] (A) | 25 |
| Output Voltage (Max) (V) | 12 |
| Output Voltage (Min) (V) | 1.3 |
| Pb (Lead) Free | No |
| Pitch (mm) | 1.3 |
| Pkg. Dimensions (mm) | 8.7 x 3.9 x 0.00 |
| Qualification Level | Standard |
| Temp. Range (°C) | 0 to +70°C |
| VBIAS (Max) (V) | 12 |
| VBIAS (Min) (V) | 12 |
| Width (mm) | 3.9 |
Resources for HIP6012
Description
Support is limited to customers who have already adopted these products.
The HIP6012 provides complete control and protection for a DC-DC converter optimized for high-performance microprocessor applications. It is designed to drive two N-Channel MOSFETs in a synchronous-rectified buck topology. The HIP6012 integrates all of the control, output adjustment, monitoring and protection functions into a single package. The output voltage of the converter can be precisely regulated to as low as 1. 27V, with a maximum tolerance of ±1. 5% over temperature and line voltage variations. The HIP6012 provides simple, single feedback loop, voltage-mode control with fast transient response. It includes a 200kHz free-running triangle-wave oscillator that is adjustable from below 50kHz to over 1MHz. The error amplifier features a 15MHz gain-bandwidth product and 6V/µs slew rate which enables high converter bandwidth for fast transient performance. The resulting PWM duty ratio ranges from 0% to 100%. The HIP6012 protects against overcurrent conditions by inhibiting PWM operation. The HIP6012 monitors the current by using the rDS(ON) of the upper MOSFET which eliminates the need for a current sensing resistor.