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Renesas Electronics Corporation
100V, 3A Source, 4A Sink, High Frequency Half-Bridge Drivers with HI/LI Input

Package Information

CAD Model:View CAD Model
Pkg. Type:TDFN
Pkg. Code:LFY
Lead Count (#):10
Pkg. Dimensions (mm):4.0 x 4.0 x 0.75
Pitch (mm):0.8

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
ECCN (US)EAR99
HTS (US)8542.39.0090
RoHS (HIP2211FRTZ-T)Download

Product Attributes

Lead Count (#)10
Carrier TypeReel
Moisture Sensitivity Level (MSL)3
Pkg. Dimensions (mm)4.0 x 4.0 x 0.75
Pitch (mm)0.8
Pb (Lead) FreeYes
Pb Free CategoryPb-Free 100% Matte Tin Plate w/Anneal-e3
Temp. Range (°C)-40 to +125°C
Country of AssemblyMALAYSIA
Country of Wafer FabricationTAIWAN
Bootstrap Supply Voltage (Max) (V)115
Charge PumpNo
Fall Time20
Input Logic Level3.3V/TTL
Length (mm)4
Longevity2033 Dec
MOQ6000
Parametric CategoryHalf-Bridge FET Drivers
Peak Pull-down Current (A)4
Peak Pull-up Current (A)3
Pkg. TypeTDFN
Price (USD)$0.9947
Qualification LevelStandard
Rise Time (μs)0.02
Simulation Model AvailableiSim
Thickness (mm)0.75
Turn-Off Prop Delay (ns)15
Turn-On Prop Delay (ns)15
VBIAS (Max) (V)18
Width (mm)4

Description

The HIP2211 is a 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver. The HIP2211 features standard HI/LI inputs and is pin-compatible with popular Renesas bridge drivers such as the HIP2101 and ISL2111. Its wide operating supply range of 6V to 18V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.

This driver features a strong 3A source, 4A sink driver with very fast 15ns typical propagation delay and 2ns typical delay matching, making it optimal for high-frequency switching applications. VDD and boot UVLO protects against an undervoltage operation.

The HIP2211 is offered in 8 Ld SOIC, 8 Ld 4x4mm DFN, and 10 Ld 4x4mm TDFN packages.