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100V, 3A Source, 4A Sink, High Frequency Half-Bridge Drivers with HI/LI Input

Package Information

CAD Model: View CAD Model
Pkg. Type: SOICN
Pkg. Code: MAB
Lead Count (#): 8
Pkg. Dimensions (mm): 4.93 x 3.94 x 1.47
Pitch (mm): 1.27

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
ECCN (US) EAR99
HTS (US) 8542.39.0090
RoHS (HIP2211FBZ-T) Download

Product Attributes

Lead Count (#) 8
Carrier Type Reel
Moisture Sensitivity Level (MSL) 1
Pkg. Dimensions (mm) 4.9 x 3.9 x 1.47
Pitch (mm) 1.3
Pb (Lead) Free Yes
Pb Free Category Nickel/Palladium/Gold-Silver - e4
Temp. Range (°C) -40 to +125°C
Country of Assembly PHILIPPINES
Country of Wafer Fabrication TAIWAN
Bootstrap Supply Voltage (Max) (V) 115
Charge Pump No
Fall Time 20
Input Logic Level 3.3V/TTL
Length (mm) 4.9
Longevity 2033 Dec
MOQ 2500
Parametric Category Half-Bridge FET Drivers
Peak Pull-down Current (A) 4
Peak Pull-up Current (A) 3
Pkg. Type SOICN
Price (USD) $0.92298
Qualification Level Standard
Rise Time (μs) 0.02
Simulation Model Available iSim
Thickness (mm) 1.47
Turn-Off Prop Delay (ns) 15
Turn-On Prop Delay (ns) 15
VBIAS (Max) (V) 18
Width (mm) 3.9

Description

The HIP2211 is a 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver. The HIP2211 features standard HI/LI inputs and is pin-compatible with popular Renesas bridge drivers such as the HIP2101 and ISL2111. Its wide operating supply range of 6V to 18V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.

This driver features a strong 3A source, 4A sink driver with very fast 15ns typical propagation delay and 2ns typical delay matching, making it optimal for high-frequency switching applications. VDD and boot UVLO protects against an undervoltage operation.

The HIP2211 is offered in 8 Ld SOIC, 8 Ld 4x4mm DFN, and 10 Ld 4x4mm TDFN packages.