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100V/2A Peak High-Frequency Half Bridge Driver with TTL Logic Inputs

Package Information

CAD Model:View CAD Model
Pkg. Type:QFN
Pkg. Code:LKD
Lead Count (#):16
Pkg. Dimensions (mm):5.0 x 5.0 x 1.00
Pitch (mm):0.8

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
ECCN (US)EAR99
HTS (US)8542.39.0090
RoHS (HIP2101IRZ)Download

Product Attributes

Lead Count (#)16
Carrier TypeTray
Moisture Sensitivity Level (MSL)3
Pitch (mm)0.8
Pkg. Dimensions (mm)5.0 x 5.0 x 1.00
Pb (Lead) FreeYes
Pb Free CategoryPb-Free 100% Matte Tin Plate w/Anneal-e3
Temp. Range (°C)-40 to +85°C
Country of AssemblyMALAYSIA
Country of Wafer FabricationUSA
Bootstrap Supply Voltage (Max) (V)114
Charge PumpNo
Fall Time10
Input Logic Level3.3V/TTL
Length (mm)5
MOQ1470
Parametric CategoryHalf-Bridge FET Drivers
Peak Pull-down Current (A)2
Peak Pull-up Current (A)2
Pkg. TypeQFN
Qualification LevelStandard
Rise Time (μs)0.01
Thickness (mm)1
Turn-Off Prop Delay (ns)25
Turn-On Prop Delay (ns)25
VBIAS (Max) (V)14
Width (mm)5

Description

The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead time for specific power circuit topologies. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.