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100V/2A Peak High-Frequency Half Bridge Driver with TTL Logic Inputs

Package Information

CAD Model: View CAD Model
Pkg. Type: SOIC
Pkg. Code: MBY
Lead Count (#): 8
Pkg. Dimensions (mm): 4.9 x 3.9 x 1.5
Pitch (mm): 1.27

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
ECCN (US) EAR99
HTS (US) 8542.39.0090
RoHS (HIP2101IBZ) Download

Product Attributes

Lead Count (#) 8
Carrier Type Tube
Moisture Sensitivity Level (MSL) 1
Pitch (mm) 1.3
Pkg. Dimensions (mm) 4.9 x 3.9 x 0.00
Pb (Lead) Free Yes
Pb Free Category Pb-Free 100% Matte Tin Plate w/Anneal-e3
Temp. Range (°C) -40 to +85°C
Country of Assembly CHINA
Country of Wafer Fabrication UNITED STATES
Bootstrap Supply Voltage (Max) (V) 114
Charge Pump No
Fall Time 10
Input Logic Level 3.3V/TTL
Length (mm) 4.9
MOQ 1960
Parametric Category Half-Bridge FET Drivers
Peak Pull-down Current (A) 2
Peak Pull-up Current (A) 2
Pkg. Type SOICN
Price (USD) $2.95829
Qualification Level Standard
Rise Time (μs) 0.01
Turn-Off Prop Delay (ns) 25
Turn-On Prop Delay (ns) 25
VBIAS (Max) (V) 14
Width (mm) 3.9

Description

The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead time for specific power circuit topologies. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.