Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | SOICN |
| Pkg. Code: | MTN |
| Lead Count (#): | 8 |
| Pkg. Dimensions (mm): | 4.93 x 3.94 x 0.00 |
| Pitch (mm): | 1.27 |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | No |
| ECCN (US) | |
| HTS (US) |
Product Attributes
| Lead Count (#) | 8 |
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | 1 |
| Pitch (mm) | 1.3 |
| Pkg. Dimensions (mm) | 4.9 x 3.9 x 0.00 |
| Pb (Lead) Free | No |
| Pb Free Category | Solder Plate |
| Temp. Range (°C) | -40 to +85°C |
| Bootstrap Supply Voltage (Max) (V) | 114 |
| Charge Pump | No |
| Fall Time | 10 |
| Input Logic Level | CMOS |
| Length (mm) | 4.9 |
| MOQ | 1960 |
| Parametric Category | Half-Bridge FET Drivers |
| Peak Pull-down Current (A) | 2 |
| Peak Pull-up Current (A) | 2 |
| Pkg. Type | SOICN |
| Qualification Level | Standard |
| Rise Time (μs) | 0.01 |
| Turn-Off Prop Delay (ns) | 20 |
| Turn-On Prop Delay (ns) | 20 |
| VBIAS (Max) (V) | 14 |
| Width (mm) | 3.9 |
Resources for HIP2100
Description
The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.