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Ultra High Frequency Matched Pair Transistors

Package Information

CAD Model: View CAD Model
Pkg. Type: SOT23
Pkg. Code: PDB
Lead Count (#): 6
Pkg. Dimensions (mm): 2.90 x 1.65 x 0.00
Pitch (mm): 0.95

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) 2
Pb (Lead) Free Yes
ECCN (US) EAR99
HTS (US) 8541.29.0040
RoHS (HFA3135IHZ96) Download

Product Attributes

Lead Count (#) 6
Carrier Type Reel
Moisture Sensitivity Level (MSL) 2
Pb (Lead) Free Yes
Pb Free Category Pb-Free 100% Matte Tin Plate w/Anneal-e3
Temp. Range (°C) -40 to +85°C
Country of Assembly MALAYSIA
Country of Wafer Fabrication UNITED STATES
CCB (pF) 0.4
CEB (pF) 0.55
Channels (#) 2
FT (GHz) 7
ICBO (nA) 5
ICEO (nA) 5
Length (mm) 2.9
MOQ 3000
NF (dB) 4.6
NPN or PNP PNP
Offset Voltage (Max) (mV) 6
Pitch (mm) 1
Pkg. Dimensions (mm) 2.9 x 1.7 x 0.00
Pkg. Type SOT23
Price (USD) $6.1375
Qualification Level Standard
V (BR) CBO (V) 21
V (BR) CEO (V) 14
V (BR) EBO (V) 5
Width (mm) 1.7
hFE 57

Description

The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8. 5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. Their high fT enables the design of UHF amplifiers which exhibit exceptional stability.