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Ultra High Frequency Matched Pair Transistors

Package Information

CAD Model:View CAD Model
Pkg. Type:SOT23
Pkg. Code:PDB
Lead Count (#):6
Pkg. Dimensions (mm):2.90 x 1.65 x 0.00
Pitch (mm):0.95

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)2
Pb (Lead) FreeYes
ECCN (US)EAR99
HTS (US)8541.29.0040
RoHS (HFA3134IHZ96)Download

Product Attributes

Lead Count (#)6
Carrier TypeReel
Moisture Sensitivity Level (MSL)2
Pb (Lead) FreeYes
Pb Free CategoryPb-Free 100% Matte Tin Plate w/Anneal-e3
Temp. Range (°C)-40 to +85°C
Country of AssemblyMALAYSIA
Country of Wafer FabricationUNITED STATES
CCB (pF)0.5
CEB (pF)0.6
Channels (#)2
FT (GHz)8.5
ICBO (nA)5
ICEO (nA)5
Length (mm)2.9
MOQ3000
NF (dB)2.4
NPN or PNPNPN
Offset Voltage (Max) (mV)6
Pitch (mm)1
Pkg. Dimensions (mm)2.9 x 1.7 x 0.00
Pkg. TypeSOT23
Price (USD)$4.88784
Qualification LevelStandard
V (BR) CBO (V)21
V (BR) CEO (V)9
V (BR) EBO (V)6
Width (mm)1.7
hFE100

Description

The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8. 5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. Their high fT enables the design of UHF amplifiers which exhibit exceptional stability.