Skip to main content
Dual Long-Tailed Pair Transistor Array

Package Information

CAD Model: View CAD Model
Pkg. Type: SOICN
Pkg. Code: MBC
Lead Count (#): 14
Pkg. Dimensions (mm): 8.69 x 3.94 x 0.00
Pitch (mm): 1.27

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) 3
Pb (Lead) Free Yes
ECCN (US) EAR99
HTS (US) 8541.29.0040
RoHS (HFA3102BZ96) Download

Product Attributes

Lead Count (#) 14
Carrier Type Reel
Moisture Sensitivity Level (MSL) 3
Pb (Lead) Free Yes
Pb Free Category Pb-Free 100% Matte Tin Plate w/Anneal-e3
Temp. Range (°C) -40 to +85°C
CCB (pF) 0.3
CEB (pF) 0.2
Channels (#) 2
FT (GHz) 10
ICBO (nA) 0.1
IOS (nA) 5000
Length (mm) 8.7
MOQ 2500
NF (dB) 2.1
NPN or PNP NPN
Offset Voltage (Max) (mV) 5
Pitch (mm) 1.3
Pkg. Dimensions (mm) 8.7 x 3.9 x 0.00
Pkg. Type SOICN
Price (USD) $5.04
Qualification Level Standard
V (BR) CBO (V) 18
V (BR) CEO (V) 12
V (BR) EBO (V) 6
Width (mm) 3.9
hFE 70

Description

The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0. 01nA.