Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | SOICN |
| Pkg. Code: | MBC |
| Lead Count (#): | 14 |
| Pkg. Dimensions (mm): | 8.69 x 3.94 x 0.00 |
| Pitch (mm): | 1.27 |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 3 |
| Pb (Lead) Free | Yes |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0040 |
| RoHS (HFA3046BZ) | Download |
Product Attributes
| Lead Count (#) | 14 |
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | 3 |
| Pb (Lead) Free | Yes |
| Pb Free Category | Pb-Free 100% Matte Tin Plate w/Anneal-e3 |
| Temp. Range (°C) | -55 to +125°C |
| Country of Assembly | PHILIPPINES |
| Country of Wafer Fabrication | UNITED STATES |
| CAGE code | 34371 |
| CCB (pF) | 0.5 |
| CEB (pF) | 0.5 |
| Die Sale Availability? | No |
| FT (GHz) | 5 |
| Flow | Harsh Environment & MIL-STD-883 |
| ICBO (nA) | 0.1 |
| ICEO (nA) | 2 |
| IOS (nA) | 5000 |
| Length (mm) | 8.7 |
| MOQ | 1000 |
| NF (dB) | 3.5 |
| NPN Transistors (#) | 5 |
| NPN or PNP | NPN |
| Offset Voltage (Max) (mV) | 5 |
| PROTO Availability? | No |
| Pitch (mm) | 1.3 |
| Pkg. Dimensions (mm) | 8.7 x 3.9 x 0.00 |
| Pkg. Type | SOICN |
| Price (USD) | $7.0375 |
| Qualification Level | Standard |
| Rating | Harsh Environment |
| V (BR) CBO (V) | 18 |
| V (BR) CEO (V) | 12 |
| V (BR) EBO (V) | 6 |
| Width (mm) | 3.9 |
| hFE | 70 |
Resources for HFA3046
Description
The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Application note AN9315 illustrates the use of these devices as RF amplifiers.