Features
- 3 micron radiation hardened SOS CMOS
- Total dose 200K or 1 Mega-RAD(Si)
- Dose rate upset >1010 RAD(Si)/s 20ns pulse
- Cosmic ray upset immunity <2 x 10-9 errors/gate day (Typ)
- Latch-up free under any conditions
- Military temperature range: -55 °C to +125 °C
- Significant power reduction compared to LSTTL ICs
- DC operating voltage range: 4.5V to 5.5V
- Input logic levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
- Input current levels Ii ≤5µA at VOL, VOH
Description
The Intersil HCS11MS is a radiation hardened triple 3-input AND gate. A high on all inputs forces the output to a high state. The HCS11MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS logic family. The HCS11MS is supplied in a 14-lead weld seal ceramic flatpack (K suffix) or a weld seal ceramic dual in-line package (D suffix).