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High Speed, Monolithic Pin Driver

Package Information

CAD Model: View CAD Model
Pkg. Type: SOICN
Pkg. Code: MAF
Lead Count (#): 8
Pkg. Dimensions (mm): 4.90 x 3.91 x 0.00
Pitch (mm): 1.27

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
Pb (Lead) Free No
ECCN (US) EAR99
HTS (US) 8542.39.0090

Product Attributes

Lead Count (#) 8
Carrier Type Reel
Pitch (mm) 1.3
Pkg. Dimensions (mm) 4.9 x 3.9 x 0.00
Pb (Lead) Free No
Temp. Range (°C) -40 to +85°C
Drivers (#) 1
Fall Time 0.02
IS (mA) 2.5
Input Signal (Max) 16
Input Signal Range 0 to VP
Input Supply (Max) (VP) 16 - 16
Input Supply Range (V) 4.5 - 16
Input Voltage (Max) (V) 16
Length (mm) 4.9
MOQ 2500
Operating Freq (Max) (MHz) 10
Output Signal (Max) (V) 16
Output Signal (Min) (V) -3
Output Signal Range -3 to 16
Peak Output Current IPK (A) 4
Pkg. Type SOICN
Qualification Level Standard
RDS (ON) (Ohms) 1.5
Rise Time (μs) 20
Turn Off Delay (ns) 20
Turn On Delay (ns) 10
VBIAS (Min) (V) 4.5
Width (mm) 3.9

Description

The EL7154 three-state pin driver is particularly well suited for ATE and level shifting applications. The 4A peak drive capability, makes the EL7154 an excellent choice when driving High-Speed capacitive lines. The P-Channel MOSFET is completely isolated from the power supply, providing a high degree of flexibility. Pin (7) can be grounded, and the output can be taken from pin (8) when a source follower output is desired. The N-Channel MOSFET has an isolated drain, but shares a common bus with pre-drivers and level shifter circuits. This is necessary to ensure that the N-Channel device can turn off effectively when VL goes below GND. In some power-FET and IGBT applications, negative drive is desirable to insure effective turn-off. The EL7154 can be used in these applications by returning VL to a moderate negative potential.