Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | SOIC-N |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | 3.81 x 4.80 |
| Pitch (mm): | 1.27 |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 1 |
| ECCN (US) | EAR99 |
| HTS (US) | 8542.32.0051 |
| Pb (Lead) Free | Yes |
Product Attributes
| Sample Catalog | Request Samples |
| Pkg. Type | SOIC-N |
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | 1 |
| Country of Assembly | PHILIPPINES |
| Country of Wafer Fabrication | TAIWAN |
| Deep Power Down (µA) | 0.35 |
| Flash by Task | Boot Loader |
| Interface | Single, Dual SPI |
| Key Benefit | Fast read, 2.3 Volt |
| MOQ | 5586 |
| Memory Class | FusionHD |
| Memory Density | 1 |
| Operating Voltage Range (V) | 2.3 - 3.6 |
| Pb (Lead) Free | Yes |
| Pitch (mm) | 1.27 |
| Pkg. Dimensions (mm) | 3.81 x 4.80 |
| Published | Yes |
| Qty. per Reel (#) | 98 |
| Read Current (mA) | 6 |
| Speed | 104 MHz |
| Supply Voltage Vcc (V) | 2.3 - 2.3 |
| Supply Voltage Vcc Range | 2.3-3.6 |
| Temp. Range (°C) | -40 to +85°C |
Resources for AT25DN011
Description
The AT25DN011 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DN011, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices.