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Renesas Electronics Corporation
3.3V 64K x 32 Synchronous PipeLined Burst SRAM

Package Information

CAD Model:View CAD Model
Pkg. Type:TQFP
Pkg. Code:PKG100
Lead Count (#):100
Pkg. Dimensions (mm):20.0 x 14.0 x 1.4
Pitch (mm):0.65

Environmental & Export Classifications

Pb (Lead) FreeYes
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041
Moisture Sensitivity Level (MSL)3

Product Attributes

Lead Count (#)100
Pb (Lead) FreeYes
Carrier TypeTray
ArchitectureSynch Burst
Bus Width (bits)32
Core Voltage (V)3.3
Density (Kb)2048
I/O Voltage (V)3.3 - 3.3
Length (mm)20
MOQ288
Moisture Sensitivity Level (MSL)3
Organization64K x 32
Output TypePipelined
Package Area (mm²)280
Pb Free Categorye3 Sn
Pitch (mm)0.65
Pkg. Dimensions (mm)20.0 x 14.0 x 1.4
Pkg. TypeTQFP
Qty. per Carrier (#)72
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)0 to 70°C
Thickness (mm)1.4
Width (mm)14

Description

The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.