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3.3V 128K x 36 Synchronous Flowthrough SRAM with 3.3V I/O

Package Information

CAD Model:View CAD Model
Pkg. Type:CABGA
Pkg. Code:BQ165
Lead Count (#):165
Pkg. Dimensions (mm):15.0 x 13.0 x 1.2
Pitch (mm):1

Environmental & Export Classifications

Pb (Lead) FreeNo
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

Product Attributes

Lead Count (#)165
Pb (Lead) FreeNo
Carrier TypeReel
Moisture Sensitivity Level (MSL)3
ArchitectureSynch Burst
Bus Width (bits)36
Core Voltage (V)3.3
Density (Kb)4608
I/O Voltage (V)3.3 - 3.3
Length (mm)15
MOQ2000
Organization128K x 36
Output TypeFlowthrough
Package Area (mm²)195
Pb Free Categorye0
Pitch (mm)1
Pkg. Dimensions (mm)15.0 x 13.0 x 1.2
Pkg. TypeCABGA
PublishedNo
Qty. per Carrier (#)0
Qty. per Reel (#)2000
Reel Size (in)13
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelYes
Temp. Range (°C)-40 to 85°C
Thickness (mm)1.2
Width (mm)13

Description

The 71V3577 3.3V CMOS SRAM is organized as 128K x 36 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.