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3.3V 128K x 36 Synchronous Pipelined Burst SRAM with 2.5V I/O

Package Information

CAD Model:View CAD Model
Pkg. Type:PBGA
Pkg. Code:BG119
Lead Count (#):119
Pkg. Dimensions (mm):14.0 x 22.0 x 2.15
Pitch (mm):1.27

Environmental & Export Classifications

Pb (Lead) FreeNo
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

Product Attributes

Lead Count (#)119
Pb (Lead) FreeNo
Carrier TypeTray
Moisture Sensitivity Level (MSL)3
ArchitectureSynch Burst
Bus Width (bits)36
Core Voltage (V)3.3
Density (Kb)4608
I/O Frequency (MHz)183 - 183
I/O Voltage (V)2.5 - 2.5
Length (mm)14
MOQ168
Organization128K x 36
Output TypePipelined
Package Area (mm²)308
Pb Free Categorye0
Pitch (mm)1.27
Pkg. Dimensions (mm)14.0 x 22.0 x 2.15
Pkg. TypePBGA
PublishedNo
Qty. per Carrier (#)84
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)0 to 70°C
Thickness (mm)2.15
Width (mm)22

Description

The 71V25761 3.3V CMOS synchronous SRAM is organized as 128K x 36 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.