Features
- Low on-state resistance:
RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A) - Low input capacitance:
Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V) - Built-in gate protection diode
Description
The 2SJ649 is a Pch Single Power Mosfet -60V -20A 48Mohm Mp-45F/To-220.
Applied Filters:
Loading