概览

RJP1CS10DWS 1250V、10A 绝缘栅双极晶体管（IGBT）提供低集电极到发射极饱和电压，可用于逆变器应用。 该器件采用切割晶圆封装类型。

  • 集电极至发射极饱和电压 VCE (sat) = 1.8V （典型值） （IC = 10A，VGE = 15V，Tc = 25 °C）
  • 高速开关
  • 短路耐受时间（最小 10μs）

应用

  • 逆变器

文档

设计和开发

ECAD 模块

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

扩展 ECAD 模块
Diagram of ECAD Models

产品选择

    Processing table
    Pkg. Type
    Carrier Type
    购买 / 样片
    器件号
    RJP1CS10DWS-80#W0
    circle有效
    memory
    view_in_ar
    		Sawn
    Parametric Table tips

    Tips for Using This Parametric Table:

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